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Abstract There is tremendous interest in employing collective excitations of the lattice, spin, charge, and orbitals to tune strongly correlated electronic phenomena. We report such an effect in a ruthenate, Ca₃Ru₂O₇, where two phonons with strong electron-phonon coupling modulate the electronic pseudogap as well as mediate charge and spin density wave fluctuations. Combining temperature-dependent Raman spectroscopy with density functional theory reveals two phonons,B₂^PandB₂^M, that are strongly coupled to electrons and whose scattering intensities respectively dominate in the pseudogap versus the metallic phases. TheB₂^Psqueezes the octahedra along the out of planec-axis, while theB₂^Melongates it, thus modulating the Ru 4d orbital splitting and the bandwidth of the in-plane electron hopping; Thus,B₂^Popens the pseudogap, whileB₂^Mcloses it. Moreover, theB₂phonons mediate incoherent charge and spin density wave fluctuations, as evidenced by changes in the background electronic Raman scattering that exhibit unique symmetry signatures. The polar order breaks inversion symmetry, enabling infrared activity of these phonons, paving the way for coherent light-driven control of electronic transport. 

Abstract Superior infrared nonlinear optical (NLO) crystals are in urgent demand in the development of lasers and optical technologies for communications and computing. The critical challenge is to find a crystal with large non‐resonant phase‐matchable NLO coefficients and high laser damage threshold (LDTs) simultaneously, which however scale inversely. This work reports such a material, MgSiP_2,that exhibits a large second harmonic generation (SHG) coefficient ofd₁₄≈d₃₆= 89 ± 5 pm V⁻¹at 1550 nm fundamental wavelength, surpassing the commercial NLO crystals AgGaS₂, AgGaSe₂, and ZnGeP₂. First principles theory reveals the polarizability and geometric arrangement of the [SiP₄] tetrahedral units as the origin of this large nonlinear response. Remarkably, it also exhibits a high LDT value of 684 GW cm⁻², which is six times larger than ZnGeP₂and three times larger than CdSiP₂. It has a wide transparency window of 0.53–10.35 µm, allowing broadband tunability. Further, it is Type I and Type II phase‐matchable with large effective SHG coefficients ofd_eff,I≈80.2 pm V⁻¹andd_eff,II≈73.4 pm V⁻¹. The outstanding properties of MgSiP₂make it a highly attractive candidate for optical frequency conversion in the infrared.